050-7636 rev a 1-2011 apt20gn60b_sdq2(g) maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 2ma) gate threshold voltage (v ce = v ge , i c = 290 a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 20a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 20a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r g(int) units volts a na symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt20gn60b_sdq2(g) 600 30 4024 60 60a @ 600v 136 -55 to 175 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 175c switching safe operating area @ t j = 175c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. utilizing the latest field stop and trench gate technologies, these igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef ? cient. low gate charge simpli ? es gate drive design and minimizes losses. 600v field stop trench gate: low v ce(on) easy paralleling 6 s short circuit capability 175c rated applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 600 5.0 5.8 6.5 1.1 1.5 1.9 1.7 50 tbd 300 n/a apt20gn60bdq2 apt20gn60sdq2 apt20gn60bdq2(g) apt20gn60sdq2(g) 600v *g denotes rohs compliant, pb free terminal finish. t o - 2 4 7 g c e d 3 pak g c e (s) (b) microsemi website - http://www.microsemi.com c e g downloaded from: http:///
apt20gn60b_sdq2(g) 050-7636 rev a 1-2011 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r g(int) nor gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci ? cations and information contained herein. thermal and mechanical characteristics unit c/w gm min typ max 1.1 .80 5.9 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa scsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 20a t j = 175c, r g = 4.3 7 , v ge = 15v, l = 100 h,v ce = 600v v cc = 360v, v ge = 15v, t j = 150c, r g = 4.3 7 inductive switching (25c) v cc = 400v v ge = 15v i c = 20a r g = 4.3 7 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 20a r g = 4.3 7 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area short circuit safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 1110 50 35 9.5 120 10 70 60 6 9 10 140 95 230 350 580 9 10 160 130 250 690 750 unit pf v nc a s ns j ns j downloaded from: http:///
050-7636 rev a 1-2011 apt20gn60b_sdq2(g) bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250 s pulse test<0.5 % duty cycle 9080 70 60 50 40 30 20 10 0 1614 12 10 86 4 2 0 3.02.5 2.0 1.5 1.0 0.5 0 6050 40 30 20 10 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 15v 12v 11v 10v 13v 9v 8v t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 175c t j = 125c t j = 25c t j = -55c t j = 175c 14v 4035 30 25 20 15 10 50 6050 40 30 20 10 0 3.02.5 2.0 1.5 1.0 0.5 0 1.401.30 1.20 1.10 1.00 0.90 0.80 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 0 5 10 15 0 20 40 60 80 100 120 140 6 8 10 12 14 16 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 v ce = 120v i c = 20a t j = 25c v ce = 300v v ce = 480v i c = 40a i c = 20a i c = 10a i c = 40a i c = 20a i c = 10a v ge = 15v typical performance curves downloaded from: http:///
apt20gn60b_sdq2(g) 050-7636 rev a 1-2011 0 500 1000 1500 2000 0 10 20 30 40 50 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 4.3 l = 100 h switching energy losses ( j) e on2 , turn on energy loss ( j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses ( j) e off , turn off energy loss ( j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 400v t j = 25c , t j =125c r g = 4.3 l = 100 h 1210 86 4 2 0 2520 15 10 50 35003000 2500 2000 1500 1000 500 0 250200 150 100 50 0 140120 100 8060 40 20 0 14001200 1000 800600 400 200 0 14001200 1000 800600 400 200 0 v ge = 15v 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 0 25 50 75 100 125 r g = 4.3 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v r g = 4.3 , l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 4.3 t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 4.3 t j = 125c t j = 25c e on2, 40a e off, 40a e on2, 10a e off, 20a e on2, 20a e off, 10a v ce = 400v v ge = +15v t j = 125c v ce = 400v v ge = +15v r g = 4.3 e on2, 40a e off, 40a e off, 20a e on2, 20a e on2, 10a e off, 10a typical performance curves downloaded from: http:///
050-7636 rev a 1-2011 apt20gn60b_sdq2(g) 1.201.00 0.80 0.60 0.40 0.20 0 z jc , thermal impedance (c/w) 0.3 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 2,0001,000 500100 5010 7060 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 5 10 15 20 25 30 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 4.3 140100 5010 7 c ies c oes c res 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 typical performance curves downloaded from: http:///
apt20gn60b_sdq2(g) 050-7636 rev a 1-2011 figure 22, turn-on switching waveforms and de ? nitions figure 23, turn-off switching waveforms and de ? nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circuit v cc apt15dq60 downloaded from: http:///
050-7636 rev a 1-2011 apt20gn60b_sdq2(g) characteristic / test conditions maximum average forward current (t c = 117c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f ( av ) i f ( rms ) i fsm symbol v f characteristic / test conditions i f = 30a forward voltage i f = 60a i f = 30a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.0 2.4 1.7 apt20gn60b_sdq2(g) 3051 320 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery anti-parallel diode min typ max - 23 - 30 - 55 - 3 - - 175 - 485 - 6 - - 75 - 855 - 22 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c typical performance curves z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 24. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.900.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 downloaded from: http:///
apt20gn60b_sdq2(g) 050-7636 rev a 1-2011 typical performance curves t j = 125 c v r = 400v 15a 30a 60a t rr q rr q rr t rr i rrm 200180 160 140 120 100 8060 40 20 0 2520 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 6050 40 30 20 10 0 1.21.0 0.8 0.6 0.4 0.2 0.0 200180 160 140 120 100 8060 40 20 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 29. dynamic parameters vs. junction temperature figure 30. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 31. junction capacitance vs. reverse voltage 100 8060 40 20 0 12001000 800600 400 200 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 25. forward current vs. forward voltage figure 26. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 27. reverse recovery charge vs. current rate of change figure 28. reverse recovery current vs. current rate of change 0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 60a 30a 15a t j = 125 c v r = 400v 60a 15a 30a downloaded from: http:///
050-7636 rev a 1-2011 apt20gn60b_sdq2(g) 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 32. diode test circuit 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v t rr / q rr waveform v r apt40gt60br to - 247 package utline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline e1 sac: tin, silver, copper e3 100% pure tin (cathode) (anode) (cathode) (cathode) (anode) (cathode) figure 32, diode reverse recovery waveform and de ? nitions downloaded from: http:///
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